Excitation-induced dephasing in a resonantly driven InAs/GaAs quantum dot.

Dephasing in InAs/GaAs quantum dots

Time-bin entanglement with a single quantum dot

This thesis presents the development of an on-demand source of time-bin entangled photons, created from the biexciton-exciton radiative cascade in a single quantum dot. To achieve a source of time-bin entangled photons, we determined that the quantum dot must have two key properties: a dephasing time that is longer than the lifetime and high count rates, which are necessary to perform the corre...

Dephasing of excitons and multiexcitons in undoped and p-doped InAs/GaAs quantum dots-in-a-well

We report an experimental investigation of the dephasing of excitons and multiexcitons in technologically relevant undoped and p-doped InAs/GaAs dot-in-a-well structures emitting near 1.3 m wavelength. Using a transient four-wave mixing technique in heterodyne detection, we measured the excitonic dephasing due to phonon coupling in the temperature range from 5 to 300 K, and the multiexcitonic d...

Measuring the photon coalescence time window in the continuous-wave regime for resonantly driven semiconductor quantum dots.

We revisit Mandel's notion that the degree of coherence equals the degree of indistinguishability by performing Hong-Ou-Mandel- (HOM-)type interferometry with single photons elastically scattered by a cw resonantly driven excitonic transition of an InAs/GaAs epitaxial quantum dot. We present a comprehensive study of the temporal profile of the photon coalescence phenomenon which shows that phot...

Wavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...